Photosensitive resin composition and display device using the same

ABSTRACT

A photosensitive resin composition according to an exemplary embodiment of the present invention includes: a nanophosphor; a photo-polymerization initiator including an acetophenone-based initiator; and a photo-polymerization compound, wherein the photo-polymerization initiator further includes at least one among a thioxanthone-based initiator, an oxime-based initiator, and a benzophenone-based initiator.

CROSS-REFERENCE TO RELATED APPLICATION

Any and all applications for which a foreign or domestic priority claimis identified in the Application Data Sheet as filed with the presentapplication are hereby incorporated by reference under 37 CFR 1.57. Thisapplication claims priority to and the benefit of Korean PatentApplication No. 10-2015-0128864 filed in the Korean IntellectualProperty Office on Sep. 11, 2015, the entire contents of which areincorporated herein by reference.

BACKGROUND

Field

The present disclosure relates to a photosensitive resin composition anda display device including the same.

Description of the Related Technology

A color filter is used in a liquid crystal display and an opticalfilter, and is manufactured by coating a minute region colored withthree colors or more on an element or a transparent substrate

The color filter may be generally formed by a pigment dispersion method.

A colored photosensitive resin composition used to manufacture the colorfilter generally includes a photo-polymerization compound, aphoto-polymerization initiator, a pigment, a solvent, and otheradditives. In this case, the pigment has a limitation in securing anexcellent luminance characteristic, and recently, the luminancecharacteristic has been improved by using a quantum dot or a phosphor aswell as the pigment.

However, recently, a color filter in which luminance and heat resistanceare excellent has been required depending on high qualityspecifications, however photo-efficiency or color reproducibility may bedecreased by heat generated in the patterning process.

It is to be understood that this background of the technology section isintended to provide useful background for understanding the technologyand as such disclosed herein, the technology background section mayinclude ideas, concepts or recognitions that were not part of what wasknown or appreciated by those skilled in the pertinent art prior to acorresponding effective filing date of subject matter disclosed herein.

SUMMARY

The present disclosure provides a photosensitive resin compositionhaving excellent exposure sensitivity and optical efficiency by using apredetermined initiator in the photosensitive resin compositionincluding a nanophosphor.

A photosensitive resin composition according to an exemplary embodimentof the present disclosure includes: a nanophosphor; aphoto-polymerization initiator including an acetophenone-basedinitiator; and a photo-polymerization compound, wherein thephoto-polymerization initiator further includes at least one among athioxanthone-based initiator, an oxime-based initiator, and abenzophenone-based initiator.

A weight percent of the acetophenone-based initiator may be larger thana weight percent of the thioxanthone-based initiator, the oxime-basedinitiator, and the benzophenone-based initiator.

The acetophenone-based initiator may be 50 wt % or more for the totalcontent of the photo-polymerization initiator.

The photosensitive resin composition may further include at least oneamong an antioxidant, a dispersant, and a scatterer.

The nanophosphor may be one of a quantum dot and an inorganic phosphor.

The quantum dot may include at least one selected from a Group II-VIcompound, a Group III-V compound, a Group IV-VI compound, a Group IVelement, and a Group IV compound, and the quantum dot is a core-shellstructure including a core and a shell covering the core.

The core may include at least one compound selected from the groupconsisting of CdSe, CdS, ZnS, ZnSe, CdTe, CdSeTe, CdZnS, PbSe, AgInZnS,ZnTe, CdSeS, PbS, PbTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InZnP,InGaP, InGaN, InAs, and ZnO, and the shell may include at least onecompound selected from the group consisting of CdSe, ZnSe, ZnS, ZnTe,CdTe, PbS, TiO, SrSe, CdO, CdS, ZnO, InP, InS, GaP, GaN, GaO, InZnP,InGaP, InGaN, InZnSCdSe, and HgSe.

The inorganic phosphor may include at least one selected from a garnetseries, a silicate series, a sulfide series, an oxynitrides series, anitride series, and an aluminate series.

A display device according to an exemplary embodiment of the presentdisclosure includes: a display panel; and a color conversion paneldisposed on the display panel, wherein the color conversion panelincludes a color conversion intermediate layer formed of aphotosensitive resin composition, the photosensitive resin compositionincludes a nanophosphor, a photo-polymerization initiator including anacetophenone-based initiator, and a photo-polymerization compound, andthe photo-polymerization initiator further includes at least one among athioxanthone-based initiator, an oxime-based initiator, and abenzophenone-based initiator.

A weight percent of the acetophenone-based initiator may be larger thana weight percent of the thioxanthone-based initiator, the oxime-basedinitiator, and the benzophenone-based initiator.

The acetophenone-based initiator may be 50 wt % or more for the totalcontent of the photo-polymerization initiator.

The display device may further include a light assembly supplying lightto the display panel and the color conversion panel.

The display panel may be disposed between the light assembly and thecolor conversion panel.

The display panel may include a thin film transistor disposed on thefirst insulation substrate, a pixel electrode connected to the thin filmtransistor, a second insulation substrate facing the first insulationsubstrate to be separated therefrom, a common electrode disposed on onesurface of the second insulation substrate toward the first insulationsubstrate, and a liquid crystal layer disposed between the pixelelectrode and the common electrode.

The display panel may include an insulation substrate, a thin filmtransistor disposed on the insulation substrate, a pixel electrodeconnected to the thin film transistor, a roof layer disposed to face thepixel electrode, and a liquid crystal layer disposed in a plurality ofmicrocavities between the pixel electrode and the roof layer.

The display panel may include liquid crystal panel, and a polarizerdisposed on both surfaces of the liquid crystal panel.

A display device according to an exemplary embodiment of the presentdisclosure includes: a thin film transistor array panel; a colorconversion display panel facing the thin film transistor array panel;and a liquid crystal layer disposed between the thin film transistorarray panel and the color conversion display panel, wherein the colorconversion display panel includes a color conversion intermediate layerformed of a photosensitive resin composition, the photosensitive resincomposition includes a nanophosphor, a photo-polymerization initiatorincluding an acetophenone-based initiator, and a photo-polymerizationcompound, and the photo-polymerization initiator includes at least oneamong a thioxanthone-based initiator, an oxime-based initiator, and abenzophenone-based initiator.

A weight percent of the acetophenone-based initiator may be larger thana weight percent of the thioxanthone-based initiator, the oxime-basedinitiator, and the benzophenone-based initiator.

The acetophenone-based initiator may be 50 wt % or more for the totalcontent of the photo-polymerization initiator.

The photosensitive resin composition including the nanophosphoraccording to an exemplary embodiment of the present disclosure mayreduce the quenching phenomenon generated by the damage of thenanophosphor depending on the process progress using the predeterminedinitiator. Also, the photosensitive resin composition according to anexemplary embodiment of the present disclosure has excellent exposuresensitivity, thereby providing a pattern with improved reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a color conversion panel accordingto an exemplary embodiment.

FIG. 2 is a schematic cross-sectional view of a display device accordingto an exemplary embodiment.

FIG. 3 is a top plan view of a display device according to an exemplaryembodiment, and FIG. 4 is a cross-sectional view taken along a lineIV-IV of FIG. 3.

FIG. 5 is a top plan view of a display device according to an exemplaryembodiment, and FIG. 6 is a cross-sectional view taken along a lineVI-VI of FIG. 5.

FIG. 7 is a cross-sectional view of a display device according to anexemplary embodiment.

FIG. 8A, FIG. 8B, and FIG. 8C are images of a photosensitive resincomposition according to an exemplary embodiment, and FIG. 9A, FIG. 9B,FIG. 9C, and FIG. 10 are images of a photosensitive resin compositionaccording to a comparative example.

FIG. 11 and FIG. 12 are graphs of a light emitting amount and a lightstorage ratio of a photosensitive resin composition according to anexemplary embodiment and a comparative example.

DETAILED DESCRIPTION

As the disclosure allows for various changes and numerous embodiments,particular embodiments will be illustrated in the drawings and describedin detail in the written description. However, this is not intended tolimit the present disclosure to particular modes of practice, and it isto be appreciated that all changes, equivalents, and substitutes that donot depart from the spirit and technical scope of the present disclosureare encompassed in the present disclosure. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Embodiments of the present disclosure will bedescribed below in more detail with reference to the accompanyingdrawings. Those components that are the same or are in correspondenceare rendered the same reference numeral regardless of the figure number,and redundant explanations are omitted.

It will be understood that although the terms “first”, “second”, etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another. As used herein, the singularforms “a,” “an” and “the” are intended to include the plural forms aswell, unless the context clearly indicates otherwise. It will be furtherunderstood that the terms “comprises” and/or “comprising” used hereinspecify the presence of stated features or components, but do notpreclude the presence or addition of one or more other features orcomponents. In the drawings, the thickness of layers, films, panels,regions, etc., are exaggerated for explanation. In other words, sincesizes and thicknesses of components in the drawings are arbitrarilyillustrated for convenience of explanation, the following embodimentsare not limited thereto. Like reference numerals designate like elementsthroughout the specification. It will be understood that when an elementsuch as a layer, film, region, or substrate is referred to as being “on”another element, it can be directly on the other element or interveningelements may also be present. In contrast, when an element is referredto as being “directly on” another element, there are no interveningelements present

Now, a photosensitive resin composition according to an exemplaryembodiment will be described.

A photosensitive resin composition according to an exemplary embodimentincludes a nanophosphor, a photo-polymerization initiator, and aphoto-polymerization compound.

Firstly, the nanophosphor according to an exemplary embodiment mayinclude at least one of a quantum dot and an inorganic phosphor.

The quantum dot may include a Group II-VI compound, a Group III-Vcompound, a Group IV-VI compound, a Group IV element, a Group IVcompound, or combinations thereof.

The Group II-VI compound may be selected from the group consisting of abinary compound selected from the group consisting of CdSe, CdTe, ZnS,ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a mixture thereof; atertiary compound selected from the group consisting of CdSeS, CdSeTe,CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe,CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, anda mixture thereof; and a quaternary compound selected from the groupconsisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe,CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof. The GroupIII-V compound may be selected from the group consisting of a binarycompound selected from the group consisting of GaN, GaP, GaAs, GaSb,AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a mixture thereof; atertiary compound selected from the group consisting of GaNP, GaNAs,GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs,InNSb, InNAs, InPSb, GaAlNP, and a mixture thereof; and a quaternarycompound selected from the group consisting of GaAlNAs, GaAlNSb,GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInNAs, GaInPSb, InAlNP,InAlNAs, InAlNSb, InAlPAs, InAlPSb, and a mixture thereof. The GroupIV-VI compound may be selected from the group consisting of a binarycompound selected from the group consisting of SnS, SnSe, SnTe, PbS,PbSe, PbTe, and a mixture thereof; a tertiary compound selected from thegroup consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS,SnPbSe, SnPbTe, and a mixture thereof; and a quaternary compoundselected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and amixture thereof. The Group IV element may be selected from the groupconsisting of Si, Ge, and a mixture thereof. The Group IV compound maybe a binary compound selected from the group consisting of SiC, SiGe,and a mixture thereof.

In this case, the binary compound, the tertiary compound, or thequaternary compound may exist in particles at a uniform concentration,or may exist in the same particle divided into states whereconcentration distributions are partially different. Further, the colorconversion media layer may have a core/shell structure where one quantumdot surrounds another quantum dot. An interface between the core and theshell may have a concentration gradient, such that a concentration of anelement existing in the shell is gradually reduced nearer to the centerthereof.

For example, the quantum dot may have a core/shell structure including acore and a shell covering the core.

The core may include one or more materials selected from the groupconsisting of CdSe, CdS, ZnS, ZnSe, CdTe, CdSeTe, CdZnS, PbSe, AgInZnS,ZnTe, CdSeS, PbS, PbTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InZnP,InGaP, InGaN, InAs, and ZnO, but is not limited thereto. The shell mayinclude one or more materials selected from the group consisting ofCdSe, ZnSe, ZnS, ZnTe, CdTe, PbS, TiO, SrSe, CdO, CdS, ZnO, InP, InS,GaP, GaN, GaO, InZnP, InGaP, InGaN, InZnSCdSe, and HgSe, but is notlimited thereto.

An average particle diameter of the core of the core/shell quantum dotmay be 2 nm to 5 nm. An average thickness of the shell may be 3 nm to 5nm. Further, the average particle diameter of the quantum dot may be 5nm to 10 nm. In the case where the core, the shell, and the quantum dotsatisfy the aforementioned range of the average particle diameter oraverage thickness, a characteristic behavior of the quantum dot may beperformed, and in a composition for forming a pattern, excellentdispersibility may be realized. In the aforementioned range, byappropriately selecting the particle diameter of the core, the averagethickness of the shell, and the average particle diameter of the quantumdot, light emitting colors of the quantum dot and/or semiconductorcharacteristics of the quantum dot and the like may be modified.

Further, a form of the quantum dot is a form generally used in the artand is not particularly limited, but more specifically, it is preferableto use forms such as spherical, pyramidal, multi-arm-shaped, or cubicnanoparticles, nanotubes, nanowires, nanofibers, and nanoplate-shapedparticles.

In some embodiments, the inorganic phosphor may include one or more ofgarnets, silicates, sulfides, oxides (oxynitrides), nitrides, andaluminates.

In some embodiments, the inorganic phosphor may include one or morematerials selected from the group consisting of Y₃Al₅O₁₂:Ce³⁺(YAG:Ce),Tb₃Al₅O₁₂:Ce³⁺(TAG:Ce), (Sr,Ba,Ca)₂SiO₄:Eu²⁺,(Sr,Ba,Ca,Mg,Zn)₂Si(OD)₄:Eu²⁺ D=F,Cl,S,N,Br, Ba₂MgSi₂O₇:Eu²⁺,Ba₂SiO₄:Eu²⁺, Ca₃(Sc,Mg)₂Si3O₁₂:Ce³⁺, (Ca,Sr)S:Eu²⁺, (Sr,Ca)Ga₂S₄:Eu²⁺,SrSi₂O₂N₂:Eu²⁺, SiAlON:Ce³⁺, β-SiAlON:Eu²⁺, Ca-α-SiAlON:Eu²⁺,Ba₃Si₆O₁₂N₂:Eu²⁺, CaAlSiN₃:Eu²⁺, (Sr,Ca)AlSiN₃:Eu²⁺, Sr₂Si₅N₈:Eu²⁺,(Sr,Ba)Al₂O₄:Eu²⁺, (Mg,Sr)Al₂O₄:Eu²⁺, and BaMg₂Al₁₆O₂₇:Eu^(2±).

In some embodiments, the photo-polymerization initiator has a functionof initiating a cross-linking and curing reaction between photosensitivefunctional groups among the photosensitive resin composition and betweenthe photosensitive materials.

In some embodiments, the photo-polymerization initiator may include anacetophenone-based initiator, a benzophenone-based initiator, anoxime-based initiator, and a thioxanthone-based initiator. In someembodiments, the photo-polymerization initiator includes theacetophenone-based initiator, and may further include at least one amongthe thioxanthone-based initiator, the oxime-based initiator, and thebenzophenone-based initiator.

The photosensitive resin composition including the acetophenone-basedinitiator may prevent a quenching phenomenon of the nanophosphor, and byfurther including the thioxanthone-based initiator, the oxime-basedinitiator, and the benzophenone-based initiator, the exposuresensitivity may be improved.

In some embodiments, the weight percent of the acetophenone-basedinitiator may be larger than weight percent of the thioxanthone-basedinitiator, the oxime-based initiator, and the benzophenone-basedinitiator, and particularly the acetophenone-based initiator may be 50wt % or more compared with the total amount of the photo-polymerizationinitiator. In a range satisfying this weight percent condition, thethioxanthone-based initiator, the oxime-based, and thebenzophenone-based initiator excluding the acetophenone-based initiatormay have various weight percents.

In some embodiments, the acetophenone-based initiator may include4′-phenoxydichloroacetophenone, 4′-t-butyldichloroacetophenone,4′-t-butyltrichloroacetophenone, 2,2-diethoxyacetophenone,2-hydroxy-2-methyl-1-phenylpropane-1-one,1-(4-isopropylphenyl)-2-hydroxy-2-methyl-propane-1-one,1-(4-dodecylphenyl)-2-hydroxy-2-methylpropane-1-one,4-(2-hydroxyethoxy)-phenyl-(2-hydroxy-2-propyl)ketone,1-hydroxycyclohexylphenylketone,2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propane-1, and the like,but is not limited thereto.

In some embodiments, the benzophenone-based initiator may includebenzophenone, 2-benzoylbenzoic acid, 2-benzoyl benzoic acid methylester, 4-phenyl benzophenone, hydroxybenzophenone, 4-benzoyl-4′-methyldiphenyl sulfide, or 3,3′-dimethyl-4-methoxy-benzophenone, however it isnot limited thereto.

In some embodiments, the oxime-based initiator may include anO-acyloxime-based compound,2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione,1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethanone,or O-ethoxycarbonyl-α-oxyamino-1-phenylpropane-1-one. In someembodiments, the O-acyloxime-based compound may include 1,2-octanedione,2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholine-4-yl-phenyl)-butane-1-one,1-(4-phenylsulfanylphenyl)-butane-1,2-dione 2-oxime-O-benzoate,1-(4-phenylsulfanylphenyl)-octane-1,2-dione 2-oxime-O-benzoate,1-(4-phenylsulfanylphenyl)-octane-1-one oxime-O-acetate,1-(4-phenylsulfanylphenyl)-butane-1-one oxime-O-acetate, and the like.

In some embodiments, the thioxanthone-based photo-polymerizationinitiator may include thioxanthone, 2-chlorothioxanthone,2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone,2,4-diisopropylthioxanthone, and the like.

As the photo-polymerization compound participates in the cross-linkingand the curing reaction along with the photosensitive compound, thephotosensitive functional group is bonded to the surface of thenanophosphor upon exposure, the resolution of the photosensitive resinpattern and the durability of the cured material are improved.

The photo-polymerization compound may have the ethylenic double bond tocause sufficient polymerization during exposure in a process of formingthe pattern, and may thus form the pattern having excellent heatresistance, light resistance, and chemical resistance.

In some embodiments, examples of the photo-polymerization compound mayinclude ethylene glycol di(meth)acrylate, diethylene glycoldi(meth)acrylate, triethylene glycol di(meth)acrylate, propylene glycoldi(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,4-butanedioldi(meth)acrylate, 1,6-hexanediol di(meth)acrylate, bisphenol Adi(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritoltri(meth)acrylate, pentaerythritol tetra(meth)acrylate, pentaerythritolhexa(meth)acrylate, dipentaerythritol di(meth)acrylate,dipentaerythritol tri(meth)acrylate, dipentaerythritolpenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, bisphenol Aepoxy(meth)acrylate, ethylene glycol monomethylether(meth)acrylate,trimethylol propane tri(meth)acrylate, tris(meth)acryloyloxyethylphosphate, novolac epoxy(meth)acrylate, and the like.

Further, the photo-polymerization compound may be a multi-functionalacrylate-based compound or a multi-functional polyalkylene oxide orpolysiloxane-based polymer including one or more of an acrylate groupand a vinyl group.

In some embodiments, examples of the photo-polymerization compound mayinclude urethane acrylate, allyloxylated cyclohexyl diacrylate,bis(acryloxyethyl)hydroxyl isocyanurate, bis(acryloxyneopentylglycol)adipate, bisphenol A diacrylate, bisphenol A dimethacrylate,1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate,1,3-butyleneglycol diacrylate, 1,3-butylene glycol dimethacrylate,dicyclopentanyl diacrylate, diethylene glycol diacrylate, diethyleneglycol dimethacrylate, dipentaerythritol hexaacrylate, dipentaerythritolmonohydroxy hexaacrylate, ditrimethylolpropane tetraacrylate, ethyleneglycol dimethacrylate, glycol methacrylate, 1,6-hexanediol diacrylate,neopentyl glycol dimethacrylate, neopentyl glycol hydroxypivalatediacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate,phosphoric acid dimethacrylate, polyethylene glycol diacrylate,polypropylene glycol diacrylate, tetraethylene glycol diacrylate,tetrabromobisphenol A diacrylate, triethylene glycol divinylether,triglycerol diacrylate, trimethylolpropane triacrylate, tripropyleneglycol diacrylate, tris(acryloxyethyl) isocyanurate, phosphoric acidtriacrylate, phosphoric acid diacrylate, acrylic acid propargyl ester,polydimethylsiloxane having a vinyl group at a terminal thereof(vinyl-terminated polydimethylsiloxane), adiphenylsiloxane-dimethylsiloxane copolymer having a vinyl group at aterminal thereof (vinyl-terminated diphenylsiloxane-dimethylsiloxanecopolymer), polyphenylmethylsiloxane having a vinyl group at a terminalthereof (vinyl-terminated polyphenylmethylsiloxane), atrifluoromethylsiloxane-dimethylsiloxane copolymer having a vinyl groupat a terminal thereof (vinyl-terminatedtrifluoromethylsiloxane-dimethylsiloxane copolymer), adiethylsiloxane-dimethylsiloxane copolymer having a vinyl group at aterminal thereof (vinyl-terminated diethylsiloxane-dimethylsiloxanecopolymer), vinylmethylsiloxane, polydimethyl siloxane having amonomethacryloxypropyl group at a terminal thereof(monomethacryloyloxypropyl-terminated polydimethyl siloxane),polydimethyl siloxane having a monovinyl group at a terminal thereof(monovinyl-terminated polydimethyl siloxane), or polyethylene oxidehaving a monoallyl group or a monotrimethylsiloxy group at a terminalthereof (monoallyl-monotrimethylsiloxy-terminated polyethylene oxide.

The content of the photo-polymerization compound is not particularlylimited, and may be appropriately selected based on the desiredphotocuring properties (a curing speed, a cured film state, and thelike), the bond number of photosensitive functional groups of thesurface of the nanophosphor, and the like.

In some embodiments, the photo-polymerization compound may furtherinclude one or more materials selected from a cyanine-based material, amerocyanine-based material, an oxonol-based material, aphthalocyanine-based material, an azo-based material, a fluorene-basedmaterial, a thiophene-based material, a diphenylethene-based material,and a phenoxazine-based material in order to form a precise pattern, butis not limited thereto.

As the photo-polymerization compound, monofunctional or multi-functionalesters of (meth)acrylic acid having at least one ethylenic double bondmay be used singularly, or a combination of two or more may be usedtogether. The photo-polymerization compound may be treated by acidanhydride to be used so that an excellent developing property isrealized.

In some embodiments, the photosensitive resin composition furtherincludes a solvent, and the solvent may be ethylene glycol acetate,ethyl cellosolve, propylene glycol methylether acetate, ethyl lactate,polyethylene glycol, cyclohexanone, or propylene glycol methylether.

In some embodiments, the organic solvent used to form the quantumdot-containing pattern may be at least one selected from the groupconsisting of dimethyl formamide (DMF), 4-hydroxy-4-methyl-2-pentanone,ethylene glycol monoethyl ether, 2-methoxyethanol, chloroform,chlorobenzene, toluene, tetrahydrofuran, dichloromethane, hexane,heptane, octane, nonane, and decane, however it is not limited thereto.

The nanophosphor including the quantum dot or the inorganic phosphor maybe added in the photosensitive resin composition as the nanophosphoritself or may be added as a shape of a nanophosphor dispersion solventincluding the dispersant, etc.

In some embodiments, the dispersant that may be included in thephotosensitive resin composition may be a non-ionic dispersant, an ionicdispersant, or a cationic dispersant and may be selectively used, andfor example, polyalkylene glycol and an ester thereof; polyoxyalkylene;a polyalcohol ester alkylene oxide addition; an alcohol alkylene oxideaddition; and the like may be used alone or while being appropriatelycombined.

In some embodiments, the photosensitive resin composition may furtherinclude the antioxidant. As the antioxidant, phenol-based,phosphorus-based, and sulfur-based compounds may be used alone or twokinds or more thereof may be used.

In some embodiments, the phenol-based antioxidant may include2,6-di-tert-butyl-p-cresol, 2,6-diphenyl-4-octadesiloxyphenol,stearyl(3,5-di-tert-butyl-4-hydroxyphenyl) propionate,distearyl(3,5-di-tert-butyl-4-hydroxybenzyl)phosphonate,tridecyl-3,5-di-tert-butyl-4-hydroxybenzyl thioacetate,thiodiethylenebis[(3,5-di-tert-butyl-4-hydroxyphenyl)propionate],4,4′-thiobis(6-tert-butyl-m-cresol),2-octylthio-4,6-di(3,5-di-tert-butyl-4-hydroxyphenoxy)-s-triazine,2,2′-methylenebis(4-methyl-6-tert-butylphenol),bis[3,3-bis(4-hydroxy-3-tert-butylphenyl)butyric acid]glycolester,4,4′-butylidenebis(2,6-di-tert-butylphenol),4,4′-butylidenebis(6-tert-butyl-3-methylphenol),2,2′-ethylidenebis(4,6-di-tert-butylphenol),1,1,3-tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane,bis[2-tert-butyl-4-methyl-6-(2-hydroxy-3-tert-butyl-5-methylbenzyl)phenyl]terephthalate,1,3,5-tris(2,6-dimethyl-3-hydroxy-4-tert-butylbenzyl) isocyanurate,1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl) isocyanurate,1,3,5-tris(3,5-di-tert-butyl-4-hydroxybenzyl)-2,4,6-trimethylbenzene,1,3,5-tris[(3,5-di-tert-butyl-4-hydroxyphenyl)propionyloxyethyl]isocyanurate,tetrakis[methylene-3-(3′,5′-di-tert-butyl-4′-hydroxyphenyl)propionate]methane,2-tert-butyl-4-methyl-6-(2-acryloyloxy-3-tert-butyl-5-methylbenzyl)phenol,3,9-bis[2-(3-tert-butyl-4-hydroxy-5-methylhydrocinnamoyloxy)-1,1-dimethylethyl]-2,4,8,10-tetraoxaspiro[5,5]undecane,triethyleneglycolbis[β-(3-tert-butyl-4-hydroxy-5-methylphenyl)propionate], tocophenol, and the like.

In some embodiments, the phosphorus-based antioxidant may includetriphenyl phosphite, tris(2,4-di-tert-butylphenyl)phosphite,tris(2,5-di-tert-butylphenyl)phosphite, tris(nonylphenyl)phosphite,tris(dinonylphenyl)phosphite, tris(mono,di-mixed nonylphenyl)phosphite,diphenylacid phosphite, 2,2′-methylenebis(4,6-di-tert-butylphenyl)octylphosphite, diphenyldecyl phosphite, diphenyloctyl phosphite,di(nonylphenyl)pentaerythritol diphosphite, phenyldiisodecyl phosphite,tributyl phosphite, tris(2-ethylhexyl)phosphite, tridecyl phosphite,trilauryl phosphite, dibutyl acid phosphite, dilauryl acid phosphite,trilauryl trithiophosphite, bis(neopentyl glycol)1,4-cyclohexanedimethyl diphosphite,bis(2,4-di-tert-butylphenyl)pentaerythritol diphosphite,bis(2,5-di-tert-butylphenyl)pentaerythritol diphosphite,bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphite,bis(2,4-dicumylphenyl)pentaerythritol diphosphite,distearylpentaerythritol diphosphite, tetra(C12-15mixed-alkyl)-4,4′-isopropylidenediphenyl phosphite,bis[2,2′-methylenebis(4,6-diamylphenyl)].isopropylidenediphenylphosphite,tetratridecyl.4,4′-butylidenebis(2-tert-butyl-5-methylphenol)diphosphite,hexa(tridecyl).1,1,3-tris(2-methyl-5-tert-butyl-4-hydroxyphenyl)butane.triphosphite,tetrakis(2,4-di-tert-butylphenyl)biphenylene diphosphonite,tris(2-[(2,4,7,9-tetrakis-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-6-yl)oxy]ethyl)amine,9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide,tris(2-[(2,4,8,10-tetrakis-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-6-yl)oxy]ethyl)amine,2-(1,1-dimethylethyl)-6-methyl-4-[3-[[2,4,8,10-tetrakis(1,1-dimethylethyl)dibenzo[d,f][1,3,2]dioxaphosphepin-6-yl]oxy]propyl]phenol2-butyl-2-ethylpropanediol.2,4,6-tri-tert-butylphenolmonophosphite, and the like.

In some embodiments, the sulfur-based antioxidant may includedialkylthiodipropionates such as dilauryl, dimyristyl, myristylstearyl,and distearylester of thiodipropionic acid,pentaerythritoltetra(β-dodecyl mercapto propionate), andβ-alkylmercaptopropionic acid esters of polyol.

In some embodiments, the photosensitive resin composition may furtherinclude the scatterer. The scatterer scatters the incident light toincrease the amount of light emitted and passing the photosensitiveresin composition and to make the front luminance and the lateralluminance to be uniform.

In some embodiments, the scatterer may include at least among TiO₂,Al₂O₃, and SiO₂, and it is not limited thereto.

The content and the size of the scatterer are not specially limited, andmay be appropriately selected by considering the configuration of thephotosensitive resin composition. In some embodiments, the diameter (nm)of the scatterer may be 1/10 to 5/10 of the light wavelength (nm)emitted from the photosensitive resin composition, and as a result thescattering efficiency of the emitted light is improved.

In some embodiments, the photosensitive resin composition may furtherinclude an alkali-soluble resin, and the alkali-soluble resin mayimprove the sensitivity, a remainder rate, and the like of thephotosensitive resin layer.

As described above, the photosensitive resin composition including atleast one of the thioxanthone-based initiator, the oxime-basedinitiator, and the benzophenone-based initiator while including theacetophenone-based initiator provides the improved exposure sensitivitywhile preventing the quenching phenomenon of the nanophosphor accordingto the manufacturing process, thereby possessing properties such as theimproved light efficiency and the smooth patterning.

In some embodiments, the photosensitive resin composition may be used asthe color filter composition, and a color conversion intermediate layerusing the described photosensitive resin composition and will bedescribed with reference to FIG. 1. FIG. 1 is a cross-sectional view ofa color conversion panel according to an exemplary embodiment of thepresent invention.

As shown in FIG. 1, the color conversion panel 30 includes a pluralityof color conversion intermediate layers 330 disposed on the insulationsubstrate 310 and a light blocking member 320 disposed between theplurality of adjacent color conversion intermediate layers 330. Theplurality of color conversion intermediate layers 330 according to thepresent exemplary embodiment may include a red color conversionintermediate layer 330R, a green color conversion intermediate layer330G, and a polymer layer 330W.

The light blocking member 320 defines the region where the red colorconversion intermediate layer 330R, the green color conversionintermediate layer 330G, and the polymer layer 330W are disposed, andthe light blocking member 320 is disposed between the red colorconversion intermediate layer 330R, the green color conversionintermediate layer 330G, and the polymer layer 330W.

The red color conversion intermediate layer 330R converts supplied bluelight into red, and for this, the red color conversion intermediatelayer 330R may include the red phosphor, and the red phosphor mayinclude at least one material among CaS, SrS, BaS, Ca₂Si₅N₈, Sr₂Si₅N₈,Ba₂Si₅N₈, CaAlSiN₃, CaMoO₄, and Eu₂Si₅N₈.

The green color conversion intermediate layer 330G converts the suppliedblue light into green, the green color conversion intermediate layer330G may include the green phosphor, and the green phosphor may be atleast one material among yttrium aluminum garnet (YAG), Ca₂SiO₄,Sr₂SiO₄, Ba₂SiO₄, SrGa₂S₄, BAM, α-SiAlON, β-SiAlON, Ca₃Sc₂Si₃O₁₂,Tb₃Al₅O₁₂, BaSiO₄, CaAlSiON, and (Sr_(1-x)Ba_(x))Si₂O₂N₂. In this case,x may be a number between 0 and 1.

Also, the red color conversion intermediate layer 330R and the greencolor conversion intermediate layer 330G may include quantum dotsconverting the color instead of the phosphor. The quantum dots may bethe same as the above-described constituent element.

The polymer layer 330W is made of a transparent polymer, and the bluelight supplied from a light assembly 500 is transmitted to appear blue.In the region emitting the blue, the polymer layer 330W may emit theincident light as it is without a separate phosphor or quantum dot.

In this case, the materials of the red color conversion intermediatelayer, the green color conversion intermediate layer, and the polymerlayer may be the above-described photosensitive resin composition,thereby being formed through the photolithography process. Thephotosensitive resin composition is the same as the above-describedphotosensitive resin composition such that the description thereof isomitted.

The above-described exemplary embodiment increases the light emittingefficiency and provides the color conversion intermediate layer havingthe excellent pattern characteristic, thereby providing the colorconversion panel with the improved color reproducibility.

Next, the display device will be described with reference to FIG. 2 toFIG. 4. FIG. 2 is a schematic cross-sectional view of a display deviceaccording to an exemplary embodiment, FIG. 3 is a top plan view of adisplay device according to an exemplary embodiment, and FIG. 4 is across-sectional view taken along a line IV-IV of FIG. 3. The descriptionfor the same constituent elements as the above-described constituentelements may be omitted.

Firstly, if the display device according to an exemplary embodiment willbe described with reference to FIG. 2, the display device includes thecolor conversion panel 30, the display panel 10, and the light assembly500.

The display panel 10 may include a liquid crystal panel 50 displaying animage and polarizers 12 and 22 disposed on both surfaces of the liquidcrystal panel 50. A first polarizer 12 and a second polarizer 22 forpolarization of the light incident from the light assembly 500 aredisposed at both surfaces of the liquid crystal panel 50. The liquidcrystal panel 50 will be described with reference to FIG. 3 to FIG. 6.

The light assembly 500 includes a light source disposed under the firstpolarizer 12 and generating light, and a light guide (not shown)receiving the light and guiding the received light in the direction ofthe display panel 10 and the color conversion panel 30.

In some embodiments, the light assembly 500 may include at least onelight emitting diode (LED), and may be a blue light emitting diode(LED). The light source according to the present disclosure may be anedge-type light assembly disposed on at least one side of the lightguide plate, or may be a direct type where the light source of the lightassembly 500 is disposed in a direct lower portion of the light guideplate (not illustrated). However, the light source is not limitedthereto.

In some embodiments, the color conversion panel 30 may be disposed onthe display panel 10, and therefore, may be disposed above the secondpolarizer 22 or may contact it.

Referring to FIG. 3 and FIG. 4, the display device according to anexemplary embodiment includes the light assembly 500, the display panel10 disposed on the light assembly 500, and the color conversion panel 30disposed on the display panel 10. The color conversion panel 30 and thelight assembly 500 according to an exemplary embodiment are the same asthe color conversion panel of FIG. 1 and the light assembly of the FIG.2 such that the description thereof is omitted.

The display panel 10 includes a lower panel 100 including a thin filmtransistor to display the image, an upper panel 200 including a secondinsulation substrate 210 facing the lower panel 100, and the liquidcrystal panel 50 including a liquid crystal layer 3 interposed betweenthe lower panel 100 and the upper panel 200.

The polarizers 12 and 22 are disposed at respective surfaces of theliquid crystal panel 50, and the polarizer 12 may be at least one of acoating-type polarizer and a wire grid polarizer. The polarizer 12 maybe disposed at one surface of the upper panel 200 by various methodssuch as a film method, a coating method, an adhering method, and thelike. However, this description is one example and it is not limitedthereto.

A plurality of pixel electrodes are disposed in a matrix shape on afirst insulation substrate 110 included in the lower panel 100.

A gate line 121 extending in a row direction and including a gateelectrode 124, a gate insulating layer 140 disposed on the gate line121, a semiconductor layer 154 disposed on the gate insulating layer140, a data line 171 disposed on the semiconductor layer 154, extendingin a column direction, and including a source electrode 173, a drainelectrode 175, a passivation layer 180 disposed on the data line 171 andthe drain electrode 175, and a pixel electrode 191 electrically andphysically connected to the drain electrode 175 through a contact hole185 are disposed on the first insulation substrate 110.

The semiconductor layer 154 disposed on the gate electrode 124 forms achannel layer in the region that is exposed by the source electrode 173and the drain electrode 175, and the gate electrode 124, thesemiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one thin film transistor.

Next, the second insulation substrate 210 faces the first insulationsubstrate 110 to be separated therefrom. Between the second insulationsubstrate 210 and the liquid crystal layer 3, a light blocking member220, a planarization layer 250, and a common electrode 270 are disposed.The light blocking member 220 is disposed on one surface of the secondinsulation substrate 210 toward the first insulation substrate 110. Theplanarization layer 250 is disposed on the light blocking member 220toward the first insulation substrate 110, and the planarization layer250 may provide the flat surface. The common electrode 270 is disposedon the planarization layer 250 toward the first insulation substrate110. According to an exemplary embodiment, the planarization layer 250may be omitted.

The common electrode 270 applied with a common voltage forms an electricfield with the pixel electrode 191 to arrange liquid crystal molecules31 disposed in the liquid crystal layer 3 between the common electrode270 and the pixel electrode 191.

The liquid crystal layer 3 includes a plurality of liquid crystalmolecules 31, and an arrangement direction of the liquid crystalmolecules 31 is controlled by an electric field between the pixelelectrode 191 and the common electrode 270. According to the arrangementof the liquid crystal molecules, transmittance of light received fromthe light assembly 500 may be controlled to display an image.

The present specification describes a liquid crystal display panel wherea liquid crystal panel forms a vertical electric field, but is notlimited thereto, and the liquid crystal panel may be a liquid crystalpanel forming a horizontal electric field or a display device such as aplasma display panel (PDP), an organic light emitting diode display(OLED), a surface conduction electron-emitter display (SED), a fieldemission display (FED), a vacuum fluorescent display (VFD), and anE-paper.

In some embodiments, the liquid crystal display has an improved emittingratio and improved color reproducibility, thereby providing the displaydevice with excellent display quality.

Next, the display device according to an exemplary embodiment of thepresent invention will be described with reference to FIG. 5 and FIG. 6.FIG. 5 is a top plan view of a display device according to an exemplaryembodiment, and FIG. 6 is a cross-sectional view taken along a lineVI-VI of FIG. 5.

Referring to FIG. 5 and FIG. 6, the display device according to anexemplary embodiment includes the display panel 10, the color conversionpanel 30, and the light assembly 500. The display panel 10 may bedisposed on the light assembly 500, and the color conversion panel 30may be disposed on the display panel 10.

The display panel 10 may include the liquid crystal panel 50 and thepolarizers 12 and 22 disposed on both surfaces of the liquid crystalpanel 50. In this case, the polarizer 12 may be at least one of thecoating-type polarizer and the wire grid polarizer, and the polarizers12 and 22 may be variously disposed on both surfaces of the liquidcrystal panel 50 such as the film type, the coating type, and theadhering type. However, this description is one example and it is notlimited thereto.

On the other hand, the color conversion panel 30 and the light assembly500 included in the display device according to an exemplary embodimentis the same as the above-described exemplary embodiment such that thedetailed description is omitted.

The liquid crystal panel 50 includes a plurality of gate conductorsincluding a plurality of gate lines 121, a plurality of step-down gatelines 123, and a plurality of storage electrode lines 131 disposed onthe insulation substrate 110.

The gate lines 121 and the step-down gate lines 123 transfer gatesignals and mainly extend in a transverse direction. The gate conductorfurther includes a first gate electrode 124 h and a second gateelectrode 124 l protruding upward and downward from the gate line 121,and further includes a third gate electrode 124 c protruding upward fromthe step-down gate line 123. The first gate electrode 124 h and thesecond gate electrode 124 l are connected with each other to form oneprotrusion. The protrusion form of the first, second, and third gateelectrodes 124 h, 124 l, and 124 c may be modified (FIG. 5).

The storage electrode line 131 mainly extends in a horizontal directionand transfers a predetermined voltage such as a common voltage Vcom. Thestorage electrode line 131 includes storage electrodes 129 protrudingupward and downward, a pair of vertical portions 134 extending downwardto be substantially perpendicular to the gate line 121, and a horizontalportion 127 connecting ends of the pair of vertical portions 134. Thehorizontal portion 127 includes a capacitor electrode 137 expandeddownward (FIG. 5).

A gate insulating layer 140 is formed on the gate conductors 121, 123,124 h, 124 l, 124 c, and 131. The gate insulating layer 140 may be madeof an inorganic insulating material such as a silicon nitride (SiNx) anda silicon oxide (SiOx). Further, the gate insulating layer 140 may beformed as a single layer or a multiple layer (FIG. 5).

A first semiconductor 154 h, a second semiconductor 154 l, and a thirdsemiconductor 154 c are formed on the gate insulating layer 140. Thefirst semiconductor 154 h may be disposed on the first gate electrode124 h, the second semiconductor 154 l may be disposed on the second gateelectrode 124I, and the third semiconductor 154 c may be disposed on thethird gate electrode 124 c. The first semiconductor 154 h and the secondsemiconductor 154 l may be connected to each other, and the secondsemiconductor 154 l and the third semiconductor 154 c may also beconnected to each other. In this case, the first semiconductor 154 h maybe extended to the lower portion of the data line 171. The first tothird semiconductors 154 h, 154 l, and 154 c may be made of amorphoussilicon, polycrystalline silicon, a metal oxide, and the like.

An ohmic contact (not illustrated) may be further formed on each of thefirst to third semiconductors 154 h, 154 l, and 154 c. The ohmic contactmay be made of a silicide or a material such as n+ hydrogenatedamorphous silicon in which an n-type impurity is doped at a highconcentration.

A data conductor including a data line 171, a first source electrode 173h, a second source electrode 173 l, a third source electrode 173 c, afirst drain electrode 175 h, a second drain electrode 175 l, and a thirddrain electrode 175 c is formed on the first to third semiconductors 154h, 154 l, and 154 c.

The data line 171 transfers a data signal and mainly extends in avertical direction to cross the gate line 121 and the step-down gateline 123. Each data line 171 extends toward the first gate electrode 124h and the second gate electrode 124 l, and includes the first sourceelectrode 173 h and the second source electrode 173 l which areconnected with each other.

Each of the first drain electrode 175 h, the second drain electrode175I, and the third drain electrode 175 c includes one wide end portionand the other rod-shaped end portion. The rod-shaped end portions of thefirst drain electrode 175 h and the second drain electrode 175 l arepartially surrounded by the first source electrode 173 h and the secondsource electrode 173 l, respectively. One wide end portion of the seconddrain electrode 175 l is again extended to form the third sourceelectrode 173 c which is bent in a ‘U’ shape. A wide end portion 177 cof the third drain electrode 175 c overlaps with the capacitor electrode137 to form a step-down capacitor Cstd, and the rod-shaped end portionis partially surrounded by the third source electrode 173 c.

The first gate electrode 124 h, the first source electrode 173 h, andthe first drain electrode 175 h form a first thin film transistor Qhtogether with the first semiconductor 154 h, the second gate electrode124I, the second source electrode 173I, and the second drain electrode175I form a second thin film transistor QI together with the secondsemiconductor 154I, and the third gate electrode 124 c, the third sourceelectrode 173 c, and the third drain electrode 175 c form the third thinfilm transistor Qc together with the third semiconductor 154 c.

The first semiconductor 154 h, the second semiconductor 154I, and thethird semiconductor 154 c are connected to each other to be formed in alinear shape, and may have substantially the same planar shape as thedata conductors 171, 173 h, 173I, 173 c, 175 h, 175I, and 175 c and theohmic contacts therebelow, except for channel regions between the sourceelectrodes 173 h, 173I, and 173 c and the drain electrodes 175 h, 175I,and 175 c.

In the first semiconductor 154 h, an exposed portion which is notcovered by the first source electrode 173 h and the first drainelectrode 175 h is disposed between the first source electrode 173 h andthe first drain electrode 175 h. In the second semiconductor 154I, anexposed portion which is not covered by the second source electrode 173Iand the second drain electrode 175I is disposed between the secondsource electrode 173I and the second drain electrode 175I. In addition,in the third semiconductor 154 c, an exposed portion which is notcovered by the third source electrode 173 c and the third drainelectrode 175 c is disposed between the third source electrode 173 c andthe third drain electrode 175 c.

A passivation layer 180 is formed on the data conductors 171, 173 h, 173l, 173 c, 175 h, 175 l, and 175 c and the semiconductors 154 h, 154 l,and 154 c exposed between the respective source electrodes 173 h/173l/173 c and the respective drain electrodes 175 h/175 l/175 c. Thepassivation layer 180 may be made of an organic insulating material oran inorganic insulating material, and may be formed as a single layer ora multiple layer.

A light blocking member 220 is disposed on the passivation layer 180.The light blocking member 220 is formed on a boundary of the pixel areaPX and the thin film transistor to prevent light leakage.

A first insulating layer 240 may be disposed on the light blockingmember 220. The first insulating layer 240 may be made of an inorganicinsulating material such as a silicon nitride (SiN_(x)), a silicon oxide(SiO_(x)), and a silicon oxynitride (SiO_(x)N_(y)). The first insulatinglayer 240 serves to protect the light blocking member 220 made of theorganic material, and may be omitted if necessary.

The first insulating layer 240, the light blocking member 220, and thepassivation layer 180 have a plurality of first contact holes 185 h anda plurality of second contact hole 185 l respectively exposing the wideend of the first drain electrode 175 h and the wide end of the seconddrain electrode 175 l.

A pixel electrode 191 is formed on the first insulating layer 240. Thepixel electrode 191 may be made of a transparent metal material such asindium tin oxide (ITO) and indium zinc oxide (IZO).

The pixel electrode 191 includes a first subpixel electrode 191 h and asecond subpixel electrode 191 l which are separated from each other withthe gate line 121 and the step-down gate line 123 therebetween, and aredisposed above and below the pixel area PX based on the gate line 121and the step-down gate line 123 to be adjacent to each other in a columndirection. That is, the first subpixel electrode 191 h and the secondsubpixel electrode 191 l are separated from each other with a firstvalley V1 therebetween, the first subpixel electrode 191 h is disposedin a first subpixel area PXa, and the second subpixel electrode 191 l isdisposed in a second subpixel area PXb.

The first subpixel electrode 191 h and the second subpixel electrode 191l are connected with the first drain electrode 175 h and the seconddrain electrode 175 l through the first contact hole 185 h and thesecond contact hole 185 l, respectively. Accordingly, when the firstthin film transistor Qh and the second thin film transistor Ql areturned on, the first thin film transistor Qh and the second thin filmtransistor Ql receive data voltages from the first drain electrode 175 hand the second drain electrode 175 l.

An overall shape of each of the first subpixel electrode 191 h and thesecond subpixel electrode 191 l is a quadrangle, and the first subpixelelectrode 191 h and the second subpixel electrode 191 l include crossstems including horizontal stems 193 h and 193 l and vertical stems 192h and 192 l crossing the horizontal stems 193 h and 193 l, respectively.Further, the first subpixel electrode 191 h and the second subpixelelectrode 191 l include a plurality of minute branches 194 h and 194 l,and protrusions 197 h and 197 l protruding downward or upward from edgesides of the subpixel electrodes 191 h and 191 l, respectively.

The pixel electrode 191 is divided into four subregions by thehorizontal stems 193 h and 193 l and the vertical stems 192 h and 192 l.The minute branches 194 h and 194 l obliquely extend from the horizontalstems 193 h and 193 l and the vertical stems 192 h and 192 l, and theextending direction may form an angle of approximately 45 degrees or 135degrees with the gate line 121 or the horizontal stems 193 h and 193 l.Further, directions in which the minute branches 194 h and 194 l of twoadjacent subregions extend may be perpendicular to each other.

The arrangement of the pixel area, the structure of the thin filmtransistor, and the shape of the pixel electrode that are describedabove are just exemplarily described, and the present disclosure is notlimited thereto, but may be variously modified.

The common electrode 270 is formed on the pixel electrode 191 so as tobe spaced apart from the pixel electrode 191 by a predetermineddistance. A microcavity 305 is formed between the pixel electrode 191and the common electrode 270. That is, the microcavity 305 is surroundedby the pixel electrode 191 and the common electrode 270. A width and anarea of the microcavity 305 may be variously modified according to asize and a resolution of the display device (FIG. 6).

The common electrode 270 may be made of a transparent metal materialsuch as indium tin oxide (ITO) and indium zinc oxide (IZO). Apredetermined voltage may be applied to the common electrode 270, and anelectric field may be generated between the pixel electrode 191 and thecommon electrode 270.

A first alignment layer 11 is formed on the pixel electrode 191. Asecond alignment layer 21 is disposed below the common electrode 270 soas to face the first alignment layer 11.

The first alignment layer 11 and the second alignment layer 21 may beformed as vertical alignment layers, and may be made of alignmentmaterials such as polyamic acid, polysiloxane, and polyimide. The firstand second alignment layers 11 and 21 may be connected to each other atthe edge of the pixel PX.

A liquid crystal layer which is formed of liquid crystal molecules 31 isformed in the microcavity 305 which is disposed between the pixelelectrode 191 and the common electrode 270. The liquid crystal molecules31 have negative dielectric anisotropy, and when no electric field isapplied, may be aligned in a direction perpendicular to the substrate110. That is, vertical orientation may be generated.

The first subpixel electrode 191 h and the second subpixel electrode 191l to which the data voltage is applied generate an electric fieldtogether with the common electrode 270 so as to determine an orientationof the liquid crystal molecules 31 disposed in the microcavity 305between the two electrodes 191 and 270. Luminance of light which passesthrough the liquid crystal layer may vary depending on the orientationof the liquid crystal molecules 31 determined as described above.

A roof layer 360 is disposed on the common electrode 270. The roof layer360 may be formed of the organic material. The microcavity 305 is formedbelow the roof layer 360, and the roof layer 360 is hardened by a curingprocess to maintain the shape of the microcavity 305. The roof layer 360is formed to be spaced apart from the pixel electrode 191 with themicrocavity 305 therebetween.

The roof layer 360 is formed in each pixel area PX and the partitionportion V2 along the pixel row, and is not formed in a liquid crystalinjection hole formation region V1. That is, the roof layer 360 is notformed between the first subpixel area PXa and the second subpixel areaPXb. In each first subpixel area PXa and each second subpixel area PXb,the microcavity 305 is formed below each roof layer 360. In thepartition portion V2, the microcavity 305 is not formed below the rooflayer 360, the roof layer 360 is protruded downward to form thepartition portion V2, and the partition portion V2 may define themicrocavities adjacent to each other in the row direction. Accordingly,the thickness of the roof layer 360 disposed at the partition portion V2may be formed to be thicker than the thickness of the roof layer 360disposed at the first subpixel area PXa and the second subpixel areaPXb. An upper surface and both sides of the microcavity 305 are formedto be covered by the roof layer 360.

An inlet part 307 exposing a part of the microcavity 305 is formed inthe common electrode 270 and the roof layer 360. Inlet parts 307 may beformed to face each other at edges of the first subpixel area PXa andthe second subpixel area PXb. That is, each inlet part 307 may be formedsuch that it corresponds to a lower side of the first subpixel area PXaand an upper side of the second subpixel area PXb so as to exposelateral sides of the microcavity 305. Since the microcavity 305 isexposed by the inlet part 307, an aligning agent or a liquid crystalmaterial may be injected into the microcavity 305 through the injectionhole 307.

An overcoat 390 may be formed on the roof layer 360.

The overcoat 390 is disposed to cover the inlet part 307 exposing thepart of the microcavity 305 to the outside. That is, the overcoat 390may seal the microcavity 305 such that the liquid crystal molecules 31formed in the microcavity 305 are not discharged to the outside. Sincethe overcoat 390 contacts the liquid crystal molecules 31, the overcoat390 may be made of a material that is not reactive with the liquidcrystal molecules 31.

The overcoat 390 may consist of a multilayer such as a double layer anda triple layer. The double layer consists of two layers that are made ofdifferent materials. The triple layer consists of three layers, andmaterials of adjacent layers are different from each other. For example,the overcoat 390 may include a layer that is made of an organicinsulating material and a layer that is made of an inorganic insulatingmaterial.

In the display device according to an exemplary embodiment, the lightemission ratio is improved and the color reproducibility is improved,thereby providing the display device of the excellent display quality,and one sheet substrate is also used, thereby simplifying themanufacturing process and the structure.

Next, the display device according to an exemplary embodiment will bedescribed with reference to FIG. 7. FIG. 7 is a cross-sectional view ofa display device according to an exemplary embodiment. The descriptionof the same as or similar constituent elements to the above-describedexemplary embodiment is omitted.

The display device according to an exemplary embodiment shown in FIG. 7includes a display panel 10′ and a light assembly 500. The display panel10′ may be disposed on the light assembly 500, though it is not limitedthereto, and the up/down position may be changed depending on theexemplary embodiment.

The display panel 10′ according to an exemplary embodiment includes athin film transistor array panel 100′, the color conversion panel 30′facing and separated from the thin film transistor array panel 100′, andthe liquid crystal layer 3 disposed between the thin film transistorarray panel 100′ and a color conversion panel 30′ and including theliquid crystal molecules. That is, in the display panel 10′ according toan exemplary embodiment, unlike in the above-described exemplaryembodiment, the color conversion panel 30′ forms part of the displaypanel 10′.

The display panel 10′ may further include the first polarizer 12disposed at one surface of the thin film transistor array panel 100′ andthe second polarizer 22 disposed at one surface of the color conversionpanel 30′.

The thin film transistor array panel 100′ according to the presentexemplary embodiment is the same as the lower panel 100 of FIG. 3 andFIG. 4 and the color conversion panel 30′ is similar to the colorconversion panel 30 of FIG. 1 such that it will be described withreference to FIG. 1, FIG. 3, and FIG. 4, as well as FIG. 7.

First, the plurality of pixel electrodes are disposed in a matrix shapeon the first insulation substrate 110 included in the thin filmtransistor array panel 100′.

The gate line 121 extending in the row direction and including the gateelectrode 124, the gate insulating layer 140 disposed on the gate line121, the semiconductor layer 154 disposed on the gate insulating layer140, the data line 171 disposed on the semiconductor layer 154,extending in a column direction, and including the source electrode 173,the drain electrode 175, the passivation layer 180 disposed on the dataline 171 and the drain electrode 175, and the pixel electrode 191electrically and physically connected to the drain electrode 175 throughthe contact hole 185 are disposed on the first insulation substrate 110.

The semiconductor layer 154 disposed on the gate electrode 124 forms thechannel layer in the region that is exposed by the source electrode 173and the drain electrode 175, and the gate electrode 124, thesemiconductor layer 154, the source electrode 173, and the drainelectrode 175 form one thin film transistor.

Next, an insulation substrate 310 faces the first insulation substrate110 to be separated therefrom. Between the insulation substrate 310 andthe liquid crystal layer 3, a plurality of color conversion intermediatelayers 330R, 330G, and 330W and a light blocking member 320 between theplurality of color conversion intermediate layers 330R, 330G, and 330Ware disposed. In detail, the plurality of color conversion intermediatelayers 330R, 330G, and 330W and the light blocking member 320 arelocated on one side of the first insulation substrate 110 that faces theinsulation substrate 310.

The light blocking member 320 defines the region where the red colorconversion intermediate layer 330R, the green color conversionintermediate layer 330G, and the polymer layer 330W are disposed, andthe red color conversion intermediate layer 330R, the green colorconversion intermediate layer 330G, and the polymer layer 330W aredisposed between the light blocking members 320.

The red color conversion intermediate layer 330R may convert the bluelight supplied from the light assembly 500 into red, and the green colorconversion intermediate layer 330G may convert the blue light suppliedfrom the light assembly 500 into green. For this, the red colorconversion intermediate layer 330R and the green color conversionintermediate layer 330G may include any one of the phosphor and thequantum dot.

The polymer layer 330W is made of the transparent polymer, and the bluelight supplied from the light assembly 500 is transmitted to appearblue. The polymer layer 330W corresponding to the region emitting bluemay include the material (as one example, the polymer such as thephotosensitive resin) emitting the incident blue without the separatephosphor or quantum dot.

Next, a planarization layer 350 is disposed on one surface of theplurality of color conversion intermediate layer 330R, 330G, and 330Wand the light blocking member 320 toward the first insulation substrate110. The planarization layer 350 may provide the flat surface, and acommon electrode 370 disposed on one surface of the planarization layer350 toward the first insulation substrate 110. The planarization layer350 may be omitted according to an exemplary embodiment.

The common electrode 370 applied with the common voltage forms theelectric field with the pixel electrode 191 and arranges the liquidcrystal molecules 31 disposed in the liquid crystal layer 3.

The liquid crystal layer 3 includes a plurality of liquid crystalmolecules 31, and the arrangement direction of the liquid crystalmolecules 31 is controlled by the electric field between the pixelelectrode 191 and the common electrode 370. According to the arrangementof the liquid crystal molecules, transmittance of light transmitted fromthe light assembly 500 may be controlled to display an image.

The display device according to the above-described exemplary embodimentdoes include the upper panel 200 shown in FIG. 4, and the colorconversion panel 30′ replaces the function and the position of the upperpanel. This display device may be provided with the further thinnerthickness and the cost and weight may be reduced.

The exemplary embodiment in which the photosensitive film resincomposition according to an exemplary embodiment is used in the colorfilter of the display device has been given, however the photosensitivefilm resin composition according to an exemplary embodiment may beapplied to any display device.

Next, an exemplary embodiment and a comparative example will bedescribed with reference to FIG. 8A to FIG. 12. FIG. 8A, FIG. 8B, andFIG. 8C are images of a photosensitive resin composition according to anexemplary embodiment, and FIG. 9A, FIG. 9B, FIG. 9C, and FIG. 10 areimages of a photosensitive resin composition according to a comparativeexample. FIG. 11 and FIG. 12 are graphs of a light emitting amount and alight storage ratio of a photosensitive resin composition according toan exemplary embodiment and a comparative example.

Firstly, FIG. 8A and FIG. 8B relate to the photosensitive resincomposition according to an exemplary embodiment, relate to aphotosensitive resin composition including a acetophenone-basedinitiator, a thioxanthone-based initiator, and an oxime-based initiatoras a photo-polymerization initiator having a weight ratio of 7:2:1.

As a result of performing the exposure and developing process by usingthe photosensitive resin composition, as shown in FIG. 8A and FIG. 8B,it may be confirmed that the patterned photosensitive resin compositiondoes not have an under-cut and a clear pattern is formed.

Also, as a result of examining the exposure sensitivity of thephotosensitive resin composition, as shown in FIG. 8C, exposuresensitivity of about 30 mJ is shown.

In contrast, when the photosensitive resin composition including onlythe acetophenone-based initiator as the comparative example isdescribed, as shown in FIG. 9A to FIG. 9B, it may be confirmed that theundercut occurs to a significant degree in the progression of exposureand developing processes for the photosensitive resin according to thecomparative example. The possibility of a disconnection or a short ishigh such that the reliability of the display device may bedeteriorated.

Also, as shown in FIG. 9C, the photosensitive resin compositionaccording to the comparative example has exposure sensitivity of about50 mJ, thus the exposure sensitivity is decreased by about 30-40%compared with the exemplary embodiment.

When the exposure sensitivity for the general is described withreference FIG. 10, the general color filter according to the comparativeexample can be seen to have exposure sensitivity of about 35 mJ. Whencomparing FIG. 8C with FIG. 9C and FIG. 10, the photosensitive resincomposition according to an exemplary embodiment not only improves theoptical efficiency through the nanophosphor, but also obtains theexcellent exposure sensitivity.

When using only the acetophenone-based initiator, the quenchingphenomenon of the nanophosphor is prevented such that the light storageratio is increased, however the exposure characteristic is deterioratedsuch that the patterning may be irregular or the undercut may begenerated. That is, the light storage ratio and the exposurecharacteristic have an inverse relationship with each other. Morespecifically, the quenching phenomenon of the nanophosphor(particularly, the quantum dot) is generated by a radical or oxidationinduced gas caused in the patterning process (particularly, the curingprocess) of the photosensitive resin composition. Particularly, in thecase of the photosensitive resin composition having the exposurecharacteristic, the quenching phenomenon is further accelerated.

However, according to an exemplary embodiment, the excellent exposurecharacteristic may be provided through the additives such as thethioxanthone-based initiator, the oxime-based initiator, and thebenzophenone-based initiator as well as the acetophenone-basedinitiator.

Next, the light emitting amount and the light storage ratio according tothe patterning process of the photosensitive resin composition accordingto an exemplary embodiment and the comparative example will be describedwith reference to FIG. 11 and FIG. 12.

As shown in FIG. 8A to FIG. 10, the photosensitive resin compositionaccording to an exemplary embodiment has exposure sensitivity of thelevel of the conventional color filter. In this case, whether thephotosensitive resin composition according to an exemplary embodimenthas the light emitting amount of the conventional level is a problem.

For the photosensitive resin composition according to an exemplaryembodiment and the comparative example, 1) drying is performed for twohours in ambient conditions, 2) a pre-curing process is performed forthree minutes in a 100° C. temperature condition, and 3) after exposureis performed by irradiating UV light of 100 mJ, 4) a curing processperforming for 30 minutes in a 180° C. temperature condition is repeatedthree times.

First, referring to FIG. 11, the comparative example as thephotosensitive resin composition only including the acetophenone-basedinitiator shows a light emitting amount that is slightly higher thanabout 2,000,000 a.u. after the curing process performed three times.

On the other hand, according to an exemplary embodiment of the presentinvention, the photosensitive resin composition including theacetophenone-based initiator, the thioxanthone-based initiator, and theoxime-based initiator shows a light emitting amount that is slightlylower than about 2,000,000 a.u. after the curing process (a post bake)performed three times.

Next, referring to FIG. 12, the comparative example only using theacetophenone-based initiator having the excellent thermal durabilityshows a light storage ratio of about 80%, and the photosensitive resincomposition according to an exemplary embodiment shows a light storageratio that is slightly lower than about 80%. That is, almost the samelight storage ratio (a difference within about 5%) appears in thecomparative example and the exemplary embodiment.

In summary, the photosensitive resin composition (the comparativeexample) only using the acetophenone initiator prevents the quenchingphenomenon depending on the curing process such that the light emittingamount of more than a predetermined level may appear, however, althoughthe photosensitive resin composition according to an exemplaryembodiment includes the other initiators as well as the acetophenoneinitiator, it may be confirmed that almost the same light emittingamount (the difference within about 5%) as the photosensitive resincomposition only including the acetophenone-based initiator may appearas the acetophenone-based initiator of more than the predeterminedweight is included.

As described above, by adding the predetermined photo-polymerizationinitiator to the photosensitive resin composition including thenanophosphor according to an exemplary embodiment, the excellentexposure sensitivity may be provided while preventing the quenchingphenomenon due to the damage of the nanophosphor generated in theprocess, thereby improving the light efficiency and the reliability ofthe display device.

It should be understood that the exemplary embodiments described thereinshould be considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each exemplaryembodiment should typically be considered as available for other similarfeatures or aspects in other exemplary embodiments. While one or moreexemplary embodiments have been described with reference to the figures,it will be understood by those of ordinary skill in the art that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the present disclosure as defined by thefollowing claims

What is claimed is:
 1. A photosensitive resin composition comprising: ananophosphor; a photo-polymerization initiator including anacetophenone-based initiator; and at least one among athioxanthone-based initiator, an oxime-based initiator, and abenzophenone-based initiator; a photo-polymerization compound, whereinthe nanophosphor is a quantum dot and wherein the quantum dot includesat least one selected from a Group II-VI compound, a Group III-Vcompound, a Group IV-VI compound, a Group IV element, and a Group IVcompound, and the quantum dot is a core-shell structure including a coreand a shell covering the core wherein a weight percent of theacetophenone-based initiator is larger than a weight percent of at leastone among the thioxanthone-based initiator, the oxime-based initiator,and the benzophenone-based initiator.
 2. The photosensitive resincomposition of claim 1, wherein the acetophenone-based initiator is 50wt % or more for the total content of the photo-polymerizationinitiator.
 3. The photosensitive resin composition of claim 1, whereinthe photosensitive resin composition further includes at least one amongan antioxidant, a dispersant, and a scatterer.
 4. The photosensitiveresin composition of claim 1, wherein the core includes a compound of atleast one selected from the group consisting of CdSe, CdS, ZnS, ZnSe,CdTe, CdSeTe, CdZnS, PbSe, AgInZnS, ZnTe, CdSeS, PbS, PbTe, HgS, HgSe,HgTe, GaN, GaP, GaAs, InP, InZnP, InGaP, InGaN, InAs, and ZnO, and theshell includes a compound of at least one selected from the groupconsisting of CdSe, ZnSe, ZnS, ZnTe, CdTe, PbS, TiO, SrSe, CdO, CdS,ZnO, InP, InS, GaP, GaN, GaO, InZnP, InGaP, InGaN, InZnSCdSe, and HgSe.5. The photosensitive resin composition of claim 1, wherein theinorganic phosphor includes at least one selected from a garnet series,a silicate series, a sulfide series, an oxynitrides series, a nitrideseries, and an aluminate series.
 6. A display device comprising: adisplay panel; and a color conversion panel disposed on the displaypanel, wherein the color conversion panel includes a color conversionintermediate layer formed of a photosensitive resin composition, thephotosensitive resin composition includes a nanophosphor, aphoto-polymerization initiator including an acetophenone-basedinitiator, and at least one among a thioxanthone-based initiator, anoxime-based initiator, and a benzophenone-based initiator; wherein aweight percent of the acetophenone-based initiator is larger than aweight percent of at least one among the thioxanthone-based initiator,the oxime-based initiator, and the benzophenone-based initiator, and aphoto-polymerization compound.
 7. The display device of claim 6, whereinthe acetophenone-based initiator is 50 wt % or more for the totalcontent of the photo-polymerization initiator.
 8. The display device ofclaim 6, further comprising a light assembly supplying light to thedisplay panel and the color conversion panel.
 9. The display device ofclaim 8, wherein the display panel is disposed between the lightassembly and the color conversion panel.
 10. The display device of claim6, wherein the display panel includes: a thin film transistor disposedon a first insulation substrate; a pixel electrode connected to the thinfilm transistor; a second insulation substrate facing the firstinsulation substrate to be separated therefrom; a common electrodedisposed on one surface of the second insulation substrate toward thefirst insulation substrate; and a liquid crystal layer disposed betweenthe pixel electrode and the common electrode.
 11. The display device ofclaim 6, wherein the display panel includes: an insulation substrate; athin film transistor disposed on the insulation substrate; a pixelelectrode connected to the thin film transistor; a roof layer disposedto face the pixel electrode; and a liquid crystal layer disposed in aplurality of microcavities between the pixel electrode and the rooflayer.
 12. The display device of claim 6, wherein the display panelincludes: a liquid crystal panel; and a polarizer disposed on bothsurfaces of the liquid crystal panel.
 13. A display device comprising: athin film transistor array panel; a color conversion display panelfacing the thin film transistor array panel; and a liquid crystal layerdisposed between the thin film transistor array panel and the colorconversion display panel, wherein the color conversion display panelincludes a color conversion intermediate layer formed of aphotosensitive resin composition, the photosensitive resin compositionincludes a nanophosphor, a photo-polymerization initiator including anacetophenone-based initiator, and at least one among athioxanthone-based initiator, an oxime-based initiator, and abenzophenone-based initiator, wherein a weight percent of theacetophenone-based initiator is larger than a weight percent of at leastone among the thioxanthone-based initiator, the oxime-based initiator,and the benzophenone-based initiator, and a photo-polymerizationcompound.
 14. The display device of claim 13, wherein theacetophenone-based initiator is 50 wt % or more for the total content ofthe photo-polymerization initiator.